JU, BK HA, BJ KIM, CJ OH, MH TCHAH, KH 2024-01-21T23:05:08Z 2024-01-21T23:05:08Z 2021-09-02 1992-11 0021-4922 https://pubs.kist.re.kr/handle/201004/146364 Several etching phenomena appeared during the Si membrane process were observed and analyzed. In case of deep etching to above 300 mum depth, the etch-defects existed at the etched surface could be classified into three categories such as hillocks, adhered reaction products and white residues. It was known that the hillocks had a pyramidal shape or trapizoidal hexahedron structures depending on the density and size of the reaction products. Also, the existence of etch-defects and the etch rate distribution over a whole 4-inch wafers were investigated when the surfaces to be etched were downward, upward horizontally and erective for the stirring bar in the solution. As the results, the downward and erected postures were favorable in the etch rate uniformity and the etch-defect removal, respectively. English JAPAN SOC APPLIED PHYSICS ETHYLENEDIAMINE-PYROCATECHOL-WATER SILICON HYDRAZINE MICROSCOPY STUDIES FOR THE DEEP-ANISOTROPIC ETCHING OF (100) SI WAFERS Article 10.1143/JJAP.31.3489 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.31, no.11, pp.3489 - 3494 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 31 11 3489 3494 scie scopus A1992KA91200002 2-s2.0-0026944070 Physics, Applied Physics Article ETHYLENEDIAMINE-PYROCATECHOL-WATER SILICON HYDRAZINE SI DEEP ETCHING ANISOTROPIC ETCHING ETCH-DEFECTS SI MEMBRANE