KIM, TW KANG, TW LEEM, JY YOM, SS YOON, YS 2024-01-21T23:05:31Z 2024-01-21T23:05:31Z 2022-01-11 1992-10-15 0022-2461 https://pubs.kist.re.kr/handle/201004/146370 GaAs epitaxial layers on Si(1 0 0) substrates having a single or a double domain 2 x 1 have been grown by molecular beam epitaxy using the two-step growth mode and thermal regrowth techniques. The initial stage and the reconstruction of the GaAs/Si heterostructures have been investigated in situ by Auger electron spectroscopy and reflection high-energy electron diffraction. GaAs layers grown by both methods show the reconstruction of a single domain, and models for the process of GaAs growth have been presented to explain the self-annihilation of the antiphase boundary. English CHAPMAN HALL LTD DISLOCATION DENSITY REDUCTION BEAM EPITAXIAL-GROWTH SINGLE DOMAIN GAAS SI 100 FILMS LAYER INITIAL-STAGE AND RECONSTRUCTION OF GAAS/SI HETEROSTRUCTURES Article 10.1007/BF00541630 1 JOURNAL OF MATERIALS SCIENCE, v.27, no.20, pp.5603 - 5608 JOURNAL OF MATERIALS SCIENCE 27 20 5603 5608 scie scopus A1992JV02400030 2-s2.0-34249842477 Materials Science, Multidisciplinary Materials Science Article DISLOCATION DENSITY REDUCTION BEAM EPITAXIAL-GROWTH SINGLE DOMAIN GAAS SI 100 FILMS LAYER