KIM, Y MIN, SK KIM, TW 2024-01-21T23:05:49Z 2024-01-21T23:05:49Z 2022-01-10 1992-10 0038-1098 https://pubs.kist.re.kr/handle/201004/146375 Capacitance-voltage measurements at room temperatures have been carried out to investigate the spatial localization of Si in delta-doped GaAs grown by atmospheric pressure metalorganic chemical vapor deposition at several doping densities and temperatures. Even though the growth temperature is as high as 750-degrees-C, the capacitance-voltage profiles show a full-width at half-maximum value of carrier profiles and a Si diffusion coefficient are 44 angstrom and 4 x 10(-17) cm2 s-1, respectively. The value of the diffusion coefficient is an order of magnitude lower than that for molecular beam epitaxy-grown samples at the same temperature. This result will be discussed by using a diffusion limiting mechanism. English PERGAMON-ELSEVIER SCIENCE LTD MOBILITY EPITAXY SILICON LAYER DIFFUSION LIMITING MECHANISM IN SI-DELTA DOPED GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION Article 10.1016/0038-1098(92)90495-U 1 SOLID STATE COMMUNICATIONS, v.84, no.4, pp.453 - 456 SOLID STATE COMMUNICATIONS 84 4 453 456 scie scopus A1992JX71000017 2-s2.0-0026939740 Physics, Condensed Matter Physics Article MOBILITY EPITAXY SILICON LAYER delta-doping MOCVD GaAs