SUH, SH MOON, SW KIM, JS LIM, SW KWAK, NJ KIM, HK KIM, JM 2024-01-21T23:08:10Z 2024-01-21T23:08:10Z 2022-01-11 1992-07 0022-0248 https://pubs.kist.re.kr/handle/201004/146414 A slider liquid phase epitaxial (LPE) technique, by which the solution composition can be kept constant during growth, has been developed to grow Hg1-xCdxTe epi-layers with x = 0.2, 0.3 and 0.7. A graphite button between the solution and HgTe wells in the slider boat is shown to be very effective in controlling Hg loss from the solution. Data are presented on compositional uniformity and reproducibility, surface morphology, and electrical properties. English ELSEVIER SCIENCE BV LPE GROWTH HG1-XCDXTE SLIDER LIQUID-PHASE EPITAXIAL-GROWTH OF HG0.8CD0.2TE, HG0.7CD0.3TE AND HG0.3CD0.7TE WITH PRECISE CONTROL OF ALLOY COMPOSITIONS Article 10.1016/0022-0248(92)90152-9 1 JOURNAL OF CRYSTAL GROWTH, v.121, no.3, pp.417 - 422 JOURNAL OF CRYSTAL GROWTH 121 3 417 422 scie scopus A1992JE87400017 2-s2.0-0026897422 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article LPE GROWTH HG1-XCDXTE