YOM, SS KANG, WN YOON, YS LEE, JI CHOI, DJ KIM, TW SEO, KY HUR, PH KIM, CY 2024-01-21T23:09:33Z 2024-01-21T23:09:33Z 2022-01-11 1992-05-29 0040-6090 https://pubs.kist.re.kr/handle/201004/146437 Metal-organic chemical vapour deposition of Al2O3 using aluminium isopropoxide (Al(OC3H7)3) and nitrous oxide (N2O) via thermal pyrolysis was investigated with the goal of producing high quality Al2O3-p-Si(100) interfaces. From the X-ray diffraction analysis, the film was found to be a gamma-Al2O3 heteroepitaxial film. The stoichiometry of the grown Al2O3 film was similar to that of sapphire observed from Auger electron spectroscopy. Room temperature capacitance-voltage measurements clearly reveal metal insulator-semiconductor behaviour for samples with thc Al2O3 insulator gate, and the interface state densities at the Al2O3-P-Si heterointerface were approximately 10(11) eV-1 cm-2, at levels centred in the silicon energy gap. English ELSEVIER SCIENCE SA LAUSANNE LAYERS INP GROWTH OF GAMMA-AL2O3 THIN-FILMS ON SILICON BY LOW-PRESSURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION Article 10.1016/0040-6090(92)90476-R 1 THIN SOLID FILMS, v.213, no.1, pp.72 - 75 THIN SOLID FILMS 213 1 72 75 scie scopus A1992HX79200011 2-s2.0-0040301919 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article LAYERS INP