LEE, MB LEE, JI KANG, KN YOON, KS HONG, S LIM, KY 2024-01-21T23:09:37Z 2024-01-21T23:09:37Z 2022-01-10 1992-05-16 0031-8965 https://pubs.kist.re.kr/handle/201004/146438 English AKADEMIE VERLAG GMBH INVERSION-LAYERS SILICON EFFECTS OF CARRIER-VELOCITY SATURATION ON THE CHARACTERISTICS OF SHORT CHANNEL MOSFETS WITH LIGHTLY DOPED DRAINS Article 10.1002/pssa.2211310149 1 PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.131, no.1, pp.K77 - K80 PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 131 1 K77 K80 scie scopus A1992JA13500038 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Note INVERSION-LAYERS SILICON MOSFET