KIM, EK CHO, HY KIM, HS MIN, SK KIM, T 2024-01-21T23:10:09Z 2024-01-21T23:10:09Z 2021-09-02 1992-05 0268-1242 https://pubs.kist.re.kr/handle/201004/146447 Schottky diode characteristics and deep levels of Si-doped n-type GaAs after hydrogen plasma exposure have been investigated as a function of substrate temperature during hydrogenation. The barrier height and reverse breakdown voltage of Au Schottky diodes on Si-doped GaAs increased during hydrogen plasma exposure. The ideality factor of the hydrogenated samples was lowered to 1.11 at substrate temperatures between 150 and 250-degrees-C, and deep levels in these samples were effectively passivated at these temperatures. These properties of n-GaAs can be related to hydrogen redistribution in an electrically passivated surface layer. Good diode characteristics and the most effective passivation of deep levels in GaAs could be achieved at a substrate temperature of about 200-degrees-C and a power density of 0.06 W cm-2. English IOP PUBLISHING LTD GROWN GAAS HB-GAAS PASSIVATION BARRIERS ELECTRON EL2 SCHOTTKY DIODE CHARACTERISTICS AND DEEP LEVELS ON HYDROGENATED N-TYPE GAAS Article 10.1088/0268-1242/7/5/014 1 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.7, no.5, pp.695 - 697 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 7 5 695 697 scie scopus A1992HU45300014 2-s2.0-36149028330 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Condensed Matter Engineering Materials Science Physics Letter GROWN GAAS HB-GAAS PASSIVATION BARRIERS ELECTRON EL2 schottky diode deep level hydrogenation GaAs