이정일 P. J. Stiles M. Heiblum 2024-01-21T23:11:21Z 2024-01-21T23:11:21Z 2022-01-10 1992-02-19 0039-6028 https://pubs.kist.re.kr/handle/201004/146467 We have examined the complex capacitance of the 2DEG in GaAs heterostructures at a temperature of 1.3 K, magnetic fields up to 8 T and over a range of frequencies from 200 Hz to 100 kHz. The experiment was performed on a high mobility GaAs/AlGaAs heterostructure from an MBE grown wafer with Corbino geometry. We find that the real and imaginary parts of the complex capacitance of the capacitively-coupled structure, are well explained by a one-dimensional diffusion model and the derived diagonal magnetoconductances in the Landau gap regions are in good agreement with those directly measured via a capacitively coupled structure (triple dip method). Spin splitting was also observed at magnetic fields as low as 2.5 T. The value of the enhanced g-factor at high magnetic fields was larger than 2 which is comparable to those determined by conductivity measurements using ohmic contacts. ？ 1992. English ELSEVIER Capacitively-coupled measurements on the frequency dependent diagonal magnetoconductance of a 2DEG in GaAs heterostructure in the quantum Hall regime Article 10.1016/0039-6028(92)90319-2 1 Surface Science, v.263, no.1-3, pp.120 - 124 Surface Science 263 1-3 120 124 N scie scopus A1992HF18600023 2-s2.0-0026818369 Chemistry, Physical Physics, Condensed Matter Chemistry Physics Article; Proceedings Paper SILICON INVERSION-LAYERS DIMENSIONAL ELECTRON-GAS MAGNETOCAPACITANCE MEASUREMENTS COMPLEX CAPACITANCE DENSITY STATES ENHANCEMENT RESISTANCE 2DEG quantum Hall heterostructure