KIM, TW KOO, BJ JUNG, M KIM, SB PARK, HL LIM, H LEE, JI KANG, KN 2024-01-21T23:12:07Z 2024-01-21T23:12:07Z 2022-01-10 1992-01-15 0021-8979 https://pubs.kist.re.kr/handle/201004/146480 The growth of high quality CdTe epitaxial films on p-InSb(111) by a simple method of temperature gradient vapor transport deposition was carried out to investigate the possibility of the existence of a two-dimensional electron gas with high mobility at CdTe/InSb heterointerfaces. From the x-ray diffraction analysis, the grown layer was found to be a CdTe epitaxial film. Photoluminescence measurements at 15 K showed that a CdTe film grown on InSb(111) in the temperature range between 180 and 280-degrees-C appeared to have an optimum crystal perfection at a substrate temperature of about 245-degrees-C. These results also indicated that the CdTe films grown above 245-degrees-C contained a significant problem due to interdiffusion from the InSb substrates during the growth. English AMER INST PHYSICS MOLECULAR-BEAM EPITAXY 001 INSB PHOTOLUMINESCENCE INTERFACES GROWTH OF CDTE EPITAXIAL-FILMS ON PARA-INSB(111) BY TEMPERATURE-GRADIENT VAPOR TRANSPORT DEPOSITION Article 10.1063/1.351360 1 JOURNAL OF APPLIED PHYSICS, v.71, no.2, pp.1049 - 1051 JOURNAL OF APPLIED PHYSICS 71 2 1049 1051 scie scopus A1992HA64500084 2-s2.0-0012831406 Physics, Applied Physics Article MOLECULAR-BEAM EPITAXY 001 INSB PHOTOLUMINESCENCE INTERFACES CdTe epitaxial films