Jeong, B.S. Choi, J.S. Chang, S.K. Chung, C.H. Park, H.L. Lee, H.J. Lee, J.I. Lim, H. Kim, S.Y. 2024-01-21T23:37:49Z 2024-01-21T23:37:49Z 2022-01-10 1992-01 0038-1098 https://pubs.kist.re.kr/handle/201004/146687 Heavily unintentionally doped n-type InGaP was grown by LPE technique. Temperature and excitation power dependence of PL measurements were carried out to investigate the first observed 2.107 eV PL peak in In0.5Ga0.5P and we confirmed the first k-nonconserving optical transition in In0.5Ga0.5P. Also the unintentionally doped major impurity was found to be sulfur through XRF technique. ？ 1992. English Semiconducting Indium Compounds--Doping Semiconductor Diodes, Light Emitting Heavy doping LPE techniques Semiconducting Indium Compounds k-nonconserving transition in heavily doped LPE grown n-type In0.5Ga0.5P Article 10.1016/0038-1098(92)90396-Q 1 Solid State Communications, v.82, no.1, pp.7 - 12 Solid State Communications 82 1 7 12 scopus 2-s2.0-0026853834 Article Semiconducting Indium Compounds--Doping Semiconductor Diodes, Light Emitting Heavy doping LPE techniques Semiconducting Indium Compounds LPE InGaP heavily doping