Ahn, K.-D. Kang, J.-H. Kim, S.-J. Park, B.-S. Park, C.-E. Park, C.-G. 2024-01-21T23:38:33Z 2024-01-21T23:38:33Z 2021-09-02 1992-01 0914-9244 https://pubs.kist.re.kr/handle/201004/146699 t-BOC protected hexakis(4-t-BOC-phenoxy)cyclotriphosphazene, TBP, was synthesized from a semiinorganic phosphazene compound and its acid-catalyzed thermal deprotection was utilized in the design of a three-component positive resist system based on the combined principles of chemical amplification and dissolution inhibition. The new resist system, PTPNS(NR/TBP/PAG), is formulated with novolac resin (NR), TBP and a photoacid generator (PAG). The dissolution characteristics of PTPNS in alkaline development are ideally suited for application to positive type resists which are based on a dissolution inhibition mechanism. The t-BOC protected TBP of the PTPNS resist system effectively acts as an acid-labile dissolution inhibitor of novolac resin when TBP concentration is more than 10 % by weight. As a representative, PTPNS(100/15/5) (by weight parts) exhibited high sensitivity in the range of 20 to 25 mJ/cm2 with contrast of 5 after exposure at 250nm light and PEB treatment at 100 to 130°C. Appropriately formulated PTPNS resist rendered positive-tone patterns down to sub-half micron with high sensitivity when the resist was exposed to KrF excimer laser or electron beam and developed with 2.38 wt% tetramethylamonium hydroxide solution. ？ 1992, The Society of Photopolymer Science and Technology(SPST). All rights reserved. English A new chemical amplification resist system based on novolac and t-BOC protected phosphazene as a dissolution inhibitor Article 10.2494/photopolymer.5.67 1 Journal of Photopolymer Science and Technology, v.5, no.1, pp.67 - 77 Journal of Photopolymer Science and Technology 5 1 67 77 N scopus 2-s2.0-0012529074 Article three component positive resist materials deep UV resists dry etch resistance chemical amplification resists dissolution inhibition resist t-BOC protected phosphazene novolac resin photosensitivity