박용주 박찬용 박승철 한철원 민석기 김기수 2024-01-21T23:39:33Z 2024-01-21T23:39:33Z 2022-01-10 1991-12 https://pubs.kist.re.kr/handle/201004/146715 The observation of striation in GaAs : Si single crystal grown by horizontal bridgman method. 수평 Bridgman 법으로 성장시킨 GaAs : Si 단결정의 Striation 관찰 = Article 3 새물리 = New physics, v.v. 31, no.no. 6, pp.709 - 715 새물리 = New physics v. 31 no. 6 709 715 수평 bridgman striation AB etching GaAs doped with Si