KIM, HS KIM, EK MIN, SK 2024-01-21T23:44:29Z 2024-01-21T23:44:29Z 2022-01-10 1991-05-15 0021-8979 https://pubs.kist.re.kr/handle/201004/146795 The effects of electron deep traps on generation lifetime in heat-treated n-type Czochralski-grown (111) Si were examined by generation lifetime and deep level transient spectroscopy measurements. An order of magnitude increase in generation lifetime was observed for the samples having denuded zone, which experienced the high/low heat treatment (20 h at 1100-degrees-C + 16 h at 750-degrees-C). Deep electron traps at E(c) - 0.47, 0.42, 0.39, and 0.30 eV occur in the oxygen precipitated region by heat treatment. Especially, the concentration of the E(c) - 0.47 eV trap decreased below 5 x 10(12) cm-3 in denuded zone. From these results, we conclude that enhancement of generation lifetime in denuded zone may be dominantly related to the decrease of concentration of the E(c) - 0.47 eV trap. English AMER INST PHYSICS LEVEL TRANSIENT SPECTROSCOPY CZOCHRALSKI SILICON-WAFERS DEFECTS EFFECTS OF ELECTRON DEEP TRAPS ON GENERATION LIFETIME IN DENUDED ZONE OF N-TYPE SI WAFER Article 10.1063/1.347636 1 JOURNAL OF APPLIED PHYSICS, v.69, no.10, pp.6979 - 6981 JOURNAL OF APPLIED PHYSICS 69 10 6979 6981 scie scopus A1991FM77100026 2-s2.0-0141471180 Physics, Applied Physics Article LEVEL TRANSIENT SPECTROSCOPY CZOCHRALSKI SILICON-WAFERS DEFECTS electron deep trap generation lifetime Cz-Si