HAN, IK LEE, YJ JO, JW LEE, JI KANG, KN 2024-01-21T23:44:58Z 2024-01-21T23:44:58Z 2022-01-10 1991-05 0169-4332 https://pubs.kist.re.kr/handle/201004/146803 Thin films of silicon nitride were deposited on Si wafers by plasma-enhanced chemical vapor deposition (PECVD). For deposition we designed and made hot wall capacitively coupled PECVD equipment which has a radial flow reactor. Using an RF generator of frequency 13.56 MHz and SiH4 (5% SiH4 in N2) + NH3 and N2 as reactive gases and the carrier gas, respectively, we systematically varied the substrate temperature (240-360-degrees-C), the partial pressure of reactive gases (0.35 < P(NH3)/P(SiH4) < 1.32, 5% SiH4 in N2) and the RF power (20-160 W), as deposition parameters. The characteristics of the films such as composition, deposition rate, refractive index and hydrogen content were investigated by AES, ellipsometry, FTIR spectrometry, nanospec and spectroscopic ellipsometry. As a result of these measurements, well-known characteristics were observed as a function of the substrate temperature and the partial pressure of the reactive gases. However, in our investigation of the RF power dependence of the refractive index of the film, we found that the refractive index increases and then decreases as we increase the RF power. To explain this, we considered the RF power-dependent heating effect in the glow discharge process and the amount of NH radicals which increases with the RF power. English ELSEVIER SCIENCE BV PHASE EPITAXY LAYERS GROWTH AND CHARACTERIZATION OF SILICON-NITRIDE FILMS BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION Article 10.1016/0169-4332(91)90313-9 1 APPLIED SURFACE SCIENCE, v.48-9, pp.104 - 110 APPLIED SURFACE SCIENCE 48-9 104 110 scie scopus A1991FT44200015 2-s2.0-0026154778 Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Article; Proceedings Paper PHASE EPITAXY LAYERS silicon-nitride