CHO, HY KIM, EK MIN, SK CHANG, KJ LEE, C 2024-01-21T23:45:05Z 2024-01-21T23:45:05Z 2021-09-02 1991-04-29 0003-6951 https://pubs.kist.re.kr/handle/201004/146805 New metastable behavior of deep levels is found in hydrogenated GaAs doped with Si. A deep level at 0.60 eV below the conduction-band minimum (E(c)) is generated during hydrogenation and shows metastable for the E(c) - 0.42 eV trap. From the defect transformations observed in biased anneals, these defects are found to be metastable defects associated with hydrogen atoms. Especially, the 400 K biased-anneal experiments indicate that an E(c) - 0.33 eV trap could be an electric field induced defect, transformed from other intrinsic defects. The E(c) - 0.60 eV trap in hydrogenated GaAs could be a hydrogen complex associated with E(c) - 0.42 eV trap and the hydrogen atom plays an important role in a metastability of deep level defects in GaAs. English AMER INST PHYSICS DONOR NEUTRALIZATION ATOMIC-HYDROGEN ELECTRON TRAP DEFECT PASSIVATION INP SEMICONDUCTORS SILICON IDENTIFICATION EL2 METASTABLE BEHAVIOR OF DEEP LEVELS IN HYDROGENATED GAAS Article 10.1063/1.105056 1 APPLIED PHYSICS LETTERS, v.58, no.17, pp.1866 - 1868 APPLIED PHYSICS LETTERS 58 17 1866 1868 scie scopus A1991FJ59700021 2-s2.0-3643092991 Physics, Applied Physics Article DONOR NEUTRALIZATION ATOMIC-HYDROGEN ELECTRON TRAP DEFECT PASSIVATION INP SEMICONDUCTORS SILICON IDENTIFICATION EL2 metastable behavior deep level hydrogenation GaAs