LEE, HS CHO, HY KIM, EK MIN, SK KANG, TW HONG, CY 2024-01-22T00:00:59Z 2024-01-22T00:00:59Z 2021-09-05 1991-02 0361-5235 https://pubs.kist.re.kr/handle/201004/146847 Deep levels have been investigated in Si-implanted and rapid-thermal-annealed semi-insulating GaAs:Cr, which was grown by a horizontal Bridgman method. Samples were implanted with a Si-dose of (1 - 5) x 10(12) ions cm-2 with 100 keV energy, and treated by a two-step rapid thermal annealing process at 900 and 800-degrees-C. After these processes, three electron deep levels at 0.81, 0.53 and 0.62 eV below the conduction band and three hole deep levels at 0.89, 0.64 and 0.42 eV above the valence band were observed. The new deep levels E(c) - 0.53 eV, E(c) - 0.62 eV, and E-epsilon + 0.64 eV in fact, dominate the implantation and/or the thermally damaged region, but are not found in the bulk. These results indicate that high-density deep levels may be induced near or within the implanted region by rapid heating and cooling, and that these defects may effect carrier activation. English MINERALS METALS MATERIALS SOC TRANSIENT PHOTOCONDUCTIVITY MEASUREMENTS ELECTRON TRAPS MIDGAP LEVELS HB-GAAS SPECTROSCOPY ACTIVATION MESFETS DEEP LEVELS IN SI-IMPLANTED AND RAPID THERMAL ANNEALED SEMI-INSULATING GAAS Article 10.1007/BF02653324 1 JOURNAL OF ELECTRONIC MATERIALS, v.20, no.2, pp.203 - 206 JOURNAL OF ELECTRONIC MATERIALS 20 2 203 206 scie scopus A1991EX69800014 2-s2.0-0026106589 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Applied Engineering Materials Science Physics Article TRANSIENT PHOTOCONDUCTIVITY MEASUREMENTS ELECTRON TRAPS MIDGAP LEVELS HB-GAAS SPECTROSCOPY ACTIVATION MESFETS DLTS RTA GAAS-CR SI-IMPLANTATION