Ahn, K.-D. Koo, D.-I. Kim, S.-J. 2024-01-22T00:01:07Z 2024-01-22T00:01:07Z 2022-01-28 1991-01 0914-9244 https://pubs.kist.re.kr/handle/201004/146849 Four kinds of new t-BOC protected maleimide copolymers P(t-BOCMI/St), P(t-BOCMI/SiSt), P(t-BOCMI/t-BOCSt) and P(t-BOCOPMI/SiSt) were investigated as thermally stable, deep UV resists in high sensitivity. The resist polymers are composed of N-(t-butyloxycarbonyl)maleimide (t-BOCMI) or N-[p-(t-butyloxycarbonyloxy)phenyl]maleimide (t-BOCOPMI) and styrene derivatives (X-St) such as styrene (St), p-(t-butoxycarbonyloxy)styrene (t-BOCSt) and p-trimethylsilylstyrene (SiSt). The t-BOC protected copolymers have alternating structures and are readily deprotected by thermolysis and acidolysis to the corresponding polar maleimide (MI) and phenolic OH functions from t-BOCMI and t-BOC-oxyphenyl, respectively. The deprotected polymers P(MI/St), P(MI/SiSt), P(MI/HOSt) and P(HOPMI/SiSt) exhibit quite high Tg’s above 245°C and high oxygen RIE resistance. In particular, the both silicon containing polymers P(MI/SiSt) and P(HOPMI/SiSt) are superior to a novolac photoresist in oxygen RIE resistance. The RIE resistance of the resist polymers in Cl2/He and CHF3/C2F6gases are found to be comparable to the novolac resist. The three t-BOCMI copolymers have very low absorbance no more than 0.2 per μm at 248 nm wavelength. The polymers P(t-BOCMI/St), P(t-BOCMI/SiSt), P(t-BOCMI/t-BOCSt) and P(t-BOCOPMI/SiSt) were compounded with 10 wt % of triphenylsulfonium hexafluoroantimonate as a photoacid generator and the resists are named as MIST, MISIX, BMIST and PMISIX, respectively. The resists films were exposed to deep UV or KrF excimer laser and post-exposure baked at 100°C followed by development with aqueous alkaline solutions for positive image-making to get sub-micron patterns. In the case of MISIX and PMISIX resists only negative tone images were possible by organic developing. Thus the t-BOC protected maleimide copolymers combine capability of high resolution with high sensitivity in deep UV region and thermal stability above 200°C along with high oxygen RIE resistance. ？ 1991, The Society of Photopolymer Science and Technology(SPST). All rights reserved. English t-BOC maleimide copolymers for thermally stable deep UV resists by chemical amplification Article 10.2494/photopolymer.4.433 1 Journal of Photopolymer Science and Technology, v.4, no.3, pp.433 - 443 Journal of Photopolymer Science and Technology 4 3 433 443 scopus 2-s2.0-0042968844 Article t-BOC protected maleimide polymers t-BOC-maleimide thermally stable resist materials deep UV resist materials chemical amplification resists deprotection of polymers N-[(t-BOC)-oxyphenyl] maleimide reactive ion etch resistance