강광남 이정일 이명복 S. Y. Lee 윤경식 2024-01-22T00:02:51Z 2024-01-22T00:02:51Z 2022-01-10 1991-01 https://pubs.kist.re.kr/handle/201004/146878 Simple model for gate-voltage dependent parasitic resistance in short channel lightly doped drain metal oxide semiconductor field effect transistors. Article 3 Japanese journal of applied physics, v.v. 30, no.no. 4A, pp.L535 - ? Japanese journal of applied physics v. 30 no. 4A L535 ? MOSFET