<?xml version="1.0" encoding="utf-8" standalone="no"?>
<dublin_core schema="dc">
<dcvalue element="contributor" qualifier="author">강광남</dcvalue>
<dcvalue element="contributor" qualifier="author">이정일</dcvalue>
<dcvalue element="contributor" qualifier="author">양진모</dcvalue>
<dcvalue element="contributor" qualifier="author">임한조</dcvalue>
<dcvalue element="contributor" qualifier="author">이유종</dcvalue>
<dcvalue element="date" qualifier="accessioned">2024-01-22T00:03:12Z</dcvalue>
<dcvalue element="date" qualifier="available">2024-01-22T00:03:12Z</dcvalue>
<dcvalue element="date" qualifier="created">2022-01-10</dcvalue>
<dcvalue element="date" qualifier="issued">1991-01</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;146884</dcvalue>
<dcvalue element="title" qualifier="none">A&#x20;modeling&#x20;on&#x20;gate&#x20;voltage&#x20;dependence&#x20;of&#x20;series&#x20;resistance&#x20;for&#x20;GaAs&#x20;MESFET&amp;apos;s&#x20;and&#x20;the&#x20;parameter&#x20;extraction&#x20;utilizing&#x20;the&#x20;gate&#x20;probe&#x20;model.</dcvalue>
<dcvalue element="title" qualifier="alternative">GaAs&#x20;MESFET&#x20;의&#x20;소오스와&#x20;드레인&#x20;직렬저항의&#x20;게이트전압&#x20;의존성에&#x20;대한&#x20;모델링&#x20;및&#x20;&#x20;Gate&#x20;probe&#x20;method&#x20;를&#x20;응용한&#x20;파라미터&#x20;추출&#x20;&#x20;=</dcvalue>
<dcvalue element="type" qualifier="none">Article</dcvalue>
<dcvalue element="description" qualifier="journalClass">3</dcvalue>
<dcvalue element="identifier" qualifier="bibliographicCitation">전자공학회논문지,&#x20;v.v.&#x20;28,&#x20;no.no.&#x20;7,&#x20;pp.526&#x20;-&#x20;?</dcvalue>
<dcvalue element="citation" qualifier="title">전자공학회논문지</dcvalue>
<dcvalue element="citation" qualifier="volume">v.&#x20;28</dcvalue>
<dcvalue element="citation" qualifier="number">no.&#x20;7</dcvalue>
<dcvalue element="citation" qualifier="startPage">526</dcvalue>
<dcvalue element="citation" qualifier="endPage">?</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">GaAs&#x20;MESFET</dcvalue>
</dublin_core>
