Kim, Y.T. Min, S.-K. Hong, Jong Sung Kim, C.-K. 2024-01-22T00:10:03Z 2024-01-22T00:10:03Z 2022-01-10 1991-01 0021-4922 https://pubs.kist.re.kr/handle/201004/146997 We have studied the properties of plasma-enhanced chemical vapor deposited tungsten (PECVD-W) thin films accord­ing to the variations of reactant mixtures, SiH4/WF6 ratio, deposition temperature and RF power density. As the result, it is found that the resistivity of PECVD-W is reduced from 70 to 40 /ifi-cm with the addition of SiH4 (SiH4/WF6 ratio = 1) even at a lower temperature (220°C) than in the previous works. For the further reduction of resistivity, with in­creasing deposition temperature from 220 to 360°C, 40 /ifi-cm is reduced to 10 /iH-cm, and (110), (200) and (211) oriented ce-phase grain growth is observed. The deposition rate is increased with the increase of the SiH4/WF6 ratio up to 1.5. However, at the SiH4/WF6 ratio of 2, the deposition rate decreases and (3 peaks are observed at the expense of the a- phase. The Auger in-depth profile indicates that 20 atomic % is incorporated into the deposition process. ？ 1991 The Japan Society of Applied Physics. English Highly conductive tungsten thin films prepared by the plasma-assisted silane reduction process Article 10.1143/JJAP.30.820 1 Japanese Journal of Applied Physics, v.30, no.4, pp.820 - 826 Japanese Journal of Applied Physics 30 4 820 826 N scopus 2-s2.0-0026141155 Article Metallic Films - Chemical Vapor Deposition Plasma Devices Silanes Spectroscopy, Auger Electron Depth Profiling Tungsten and Alloys Crystal structure Deposition temperature Pecvd Resistivity Silane reduction Tungsten thin films