Kim, Y.T. Hong, J.S. Min, S.-K. 2024-01-22T00:10:10Z 2024-01-22T00:10:10Z 2022-01-10 1991-01 0003-6951 https://pubs.kist.re.kr/handle/201004/146999 Resistivities of tungsten thin films deposited by plasma enhanced chemical vapor deposition are very sensitive to the H2/WF6 partial pressure ratio, while the resistivities of tungsten films deposited by low pressure chemical vapor deposition are insensitive to the H2/WF 6 ratio. The reason is investigated with x-ray diffraction, transmission electron microscopy, Auger electron spectroscopy and optical emission spectroscopy. As a result, when the H2/WF6 partial pressure ratio is higher than 15, plasma deposited tungsten has a low resistive (11 μΩcm) bcc structure without F impurities. However, if the H2/WF6 ratios are decreased, porous and β-phase W films are formed due to the incomplete reduction of F concentrations. English New insights on the effect of hydrogen to tungsten hexafluoride partial pressure ratio on plasma deposited tungsten thin films Article 10.1063/1.105763 1 Applied Physics Letters, v.59, no.24, pp.3136 - 3138 Applied Physics Letters 59 24 3136 3138 scopus 2-s2.0-3743108133 Article