KIM, Y KIM, MS MIN, SK LEE, CC YOO, KH 2024-01-22T00:13:53Z 2024-01-22T00:13:53Z 2022-01-10 1990-09 0021-8979 https://pubs.kist.re.kr/handle/201004/147060 English AMER INST PHYSICS SELENIUM AND SILICON DELTA-DOPING PROPERTIES OF GAAS BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION Article 10.1063/1.346451 1 JOURNAL OF APPLIED PHYSICS, v.68, no.6, pp.2747 - 2751 JOURNAL OF APPLIED PHYSICS 68 6 2747 2751 N scie scopus A1990DY61800029 2-s2.0-0006625991 Physics, Applied Physics Article delta-doping MOCVD GaAs