김용 김무성 KIM, EUN KYU 김현수 민석기 이현우 김재관 이주천 2024-01-22T00:16:57Z 2024-01-22T00:16:57Z 2022-01-10 1990-04 0021-8979 https://pubs.kist.re.kr/handle/201004/147110 English American Institute of Physics Stress released layers formed by pulsed ruby laser annealing on GaAs-on-Si. Article 1 Journal of Applied Physics, v.v. 67, pp.3358 - 3364 Journal of Applied Physics v. 67 3358 3364 N scopus GaAs-on-Si laser annealing MOCVD