KIM, EK CHO, HY KIM, Y KIM, MS KIM, HS MIN, SK YOON, JH CHOH, SH 2024-01-22T00:17:33Z 2024-01-22T00:17:33Z 2022-01-10 1990-03-01 0021-8979 https://pubs.kist.re.kr/handle/201004/147120 English AMER INST PHYSICS DEEP ELECTRON TRAPS IN GAAS-LAYERS GROWN ON (100)SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION Article 10.1063/1.345493 1 JOURNAL OF APPLIED PHYSICS, v.67, no.5, pp.2454 - 2456 JOURNAL OF APPLIED PHYSICS 67 5 2454 2456 scie scopus A1990CR96900037 2-s2.0-3843140535 Physics, Applied Physics Article deep electron trap GaAs on Si metalorganic chemical vapor deposition (MOCVD)