김용 조훈영 김은규 윤주훈 조성호 김무성 김현수 민석기 2024-01-22T00:31:33Z 2024-01-22T00:31:33Z 2022-01-10 1990-03 https://pubs.kist.re.kr/handle/201004/147133 Deep traps in GaAs layers grown on (100)Si substrates by Mo(VI). Article 3 Journal of applied physics, v.v. 67, pp.2454 - ? Journal of applied physics v. 67 2454 ? deep levels GaAs-on-Si MOCVD