CHO, HY KIM, EK KIM, Y MIN, SK YOON, JH CHOH, SH 2024-01-22T00:31:59Z 2024-01-22T00:31:59Z 2021-09-05 1990-02-19 0003-6951 https://pubs.kist.re.kr/handle/201004/147140 English AMER INST PHYSICS DEEP LEVELS IN GAAS GROWN ON SI DURING RAPID THERMAL ANNEALING Article 10.1063/1.102705 1 APPLIED PHYSICS LETTERS, v.56, no.8, pp.761 - 763 APPLIED PHYSICS LETTERS 56 8 761 763 scie scopus A1990CP30100021 2-s2.0-36549090846 Physics, Applied Physics Article deep levels GaAs-on-Si rapid thermal annealing