김은규 조훈형 민석기 조성호 2024-01-22T00:43:15Z 2024-01-22T00:43:15Z 2022-01-10 1989-08 https://pubs.kist.re.kr/handle/201004/147323 Isothermal capacitance transient spectroscopy(ICTS) study for midgap levels in HB-GaAs by rapid thermal annealing. Article 3 Applied physics A, v.v. 48, pp.359 - 363 Applied physics A v. 48 359 363 ICTS midgap level HB-GaAs rapid thermal annealing