김용 김무성 김현수 민석기 2024-01-22T01:09:30Z 2024-01-22T01:09:30Z 2022-01-10 1988-10 0022-0248 https://pubs.kist.re.kr/handle/201004/147542 Structural properties (lattice parameters, misorientation, and crystal quality) of 1-5.5 μ m thick GaAs layers grown on exact (100) Si and 3° off-oriented (100) Si substrates have been measured by DCX (double crystal X-ray) diffractometry. The measured lattice constants normal (α⊥) and parallel (α∥) to the interface are 5.6473 ？ and 5.6639-5.6745 ？, respectively; α⊥ does not d epend on the layer thickness, but α∥ depends on the layer thickness in the range 1-5.5 μ m. Except for the case of exact (100) Si substrate, the GaAs [100] direction is between the surface normal and the [100] Si substrate, and the magnitude of the relative tilt between the GaAs and Si [100] directions is about 0.05°. ？ 1988. English ELSEVIER Structural properties of GaAs grown on (100) Si substrates by MOCVD Article 10.1016/0022-0248(88)90036-X 1 Journal of Crystal Growth, v.92, no.3-4, pp.507 - 512 Journal of Crystal Growth 92 3-4 507 512 N scie scopus A1988R308100017 2-s2.0-0024092473 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article MOCVD GaAs-on-Si structural property