CHO, HY KIM, EK MIN, SK KIM, JB JANG, J 2024-01-22T01:09:56Z 2024-01-22T01:09:56Z 2022-01-10 1988-09-05 0003-6951 https://pubs.kist.re.kr/handle/201004/147549 English AMER INST PHYSICS CREATION OF DEEP LEVELS IN HORIZONTAL BRIDGMAN-GROWN GAAS BY HYDROGENATION Article 10.1063/1.100094 1 APPLIED PHYSICS LETTERS, v.53, no.10, pp.856 - 858 APPLIED PHYSICS LETTERS 53 10 856 858 scie scopus A1988P904400013 Physics, Applied Physics Article deep level hydrogenation GaAs