강광남 이명복 이정일 2024-01-22T01:17:54Z 2024-01-22T01:17:54Z 2022-01-10 1988-01 https://pubs.kist.re.kr/handle/201004/147679 The effects of residual oxide layers formed after chemical etching on the electrical characteristics of Al/GaAs schottky barrier. 화학식각된 계면산화막이 Al/GaAs schottky barrier 의 전기적 특성에 미치는 효과 = Article 3 새물리, v.v. 25, no.no. 3, pp.349 - ? 새물리 v. 25 no. 3 349 ? schottky barrier