주병권 S. R. Rho S. H. Kim C. J. Kim 2024-01-22T01:32:00Z 2024-01-22T01:32:00Z 2022-01-10 1987-12 0374-4884 https://pubs.kist.re.kr/handle/201004/147697 Korean Physical Society Fabrication of diodes using the Si-iBP-Si SOI structure Article 2 Journal of the Korean Physical Society, v.20, no.4, pp.373 - 378 Journal of the Korean Physical Society 20 4 373 378 silicon on insulator SOI device