Su-Yeon Joung Haena Yim Donghun Lee Jaehyung Shim So Yeon Yoo Yeon Ho Kim Jin Seok Kim Hyunjun Kim Seok-Ki Hyeong Junhee Kim Yong-Young Noh Sukang Bae Myung Jin Park Ji-Won Choi Chul-Ho Lee 2024-01-25T06:00:49Z 2024-01-25T06:00:49Z 2024-01-25 2024-01 1936-0851 https://pubs.kist.re.kr/handle/201004/148472 Assembling solution-processed van der Waals (vdW) materials into thin films holds great promise for constructing large-scale, high-performance thin-film electronics, especially at low temperatures. While transition metal dichalcogenide thin films assembled in solution have shown potential as channel materials, fully solution-processed vdW electronics have not been achieved due to the absence of suitable dielectric materials and high-temperature processing. In this work, we report on all-solution-processedvdW thin-film transistors (TFTs) comprising molybdenum disulfides (MoS2) as the channel and Dion？Jacobson-phase perovskite oxides as the high-permittivity dielectric. The constituent layers are prepared as colloidal solutions through electrochemical exfoliation of bulk crystals, followed by sequential assembly into a semiconductor/dielectric heterostructure for TFT construction. Notably, all fabrication processes are carried out at temperatures below 250 °C. The fabricated MoS2 TFTs exhibit excellent device characteristics, including high mobility (>10 cm2 V-1 s-1) and an on/off ratio exceeding 106. Additionally, the use of a high-k dielectric allows for operation at low voltage (∼5 V) and leakage current (∼10？11 A), enabling low power consumption. Our demonstration of the low-temperature fabrication of high-performance TFTs presents a cost-effective and scalable approach for heterointegrated thin-film electronics. English American Chemical Society All-Solution-Processed High-Performance MoS2 Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric Article 10.1021/acsnano.3c06972 1 ACS Nano, v.18, no.3, pp.1958 - 1968 ACS Nano 18 3 1958 1968 N scie scopus 001148238800001 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Chemistry Science & Technology - Other Topics Materials Science Article GATE EXFOLIATION YIELD TFTS two-dimensional materials solution process thin-film transistors quasi-2Dperovskite oxide dielectric low-temperature processing