Wang, Fei Shi, Guoyi Kim, Kyoung-Whan Park, Hyeon-Jong Jang, Jae Gwang Tan, Hui Ru Lin, Ming Liu, Yakun Kim, Taeheon Yang, Dongsheng Zhao, Shishun Lee, Kyusup Yang, Shuhan Soumyanarayanan, Anjan Lee, Kyung-Jin Yang, Hyunsoo 2024-01-29T01:00:09Z 2024-01-29T01:00:09Z 2024-01-28 2024-06 1476-1122 https://pubs.kist.re.kr/handle/201004/148488 The key challenge of spin？orbit torque applications lies in exploring an excellent spin source capable of generating out-of-plane spins while exhibiting high spin Hall conductivity. Here we combine PtTe2 for high spin conductivity and WTe2 for low crystal symmetry to satisfy the above requirements. The PtTe2/WTe2 bilayers exhibit a high in-plane spin Hall conductivity σs,y？？？2.32？×？105？×？ħ/2e？Ω？1？m？1 and out-of-plane spin Hall conductivity σs,z？？？0.25？×？105？×？ħ/2e？Ω？1？m？1, where ħ is the reduced Planck’s constant and e is the value of the elementary charge. The out-of-plane spins in PtTe2/WTe2 bilayers enable the deterministic switching of perpendicular magnetization at room temperature without magnetic fields, and the power consumption is 67 times smaller than that of the Pt control case. The high out-of-plane spin Hall conductivity is attributed to the conversion from in-plane spin to out-of-plane spin, induced by the crystal asymmetry of WTe2. Our work establishes a low-power perpendicular magnetization manipulation based on wafer-scale two-dimensional van der Waals heterostructures. English Nature Publishing Group Field-free switching of perpendicular magnetization by two-dimensional PtTe2/WTe2 van der Waals heterostructures with high spin Hall conductivity Article 10.1038/s41563-023-01774-z 1 Nature Materials, v.23, no.6, pp.768 - 774 Nature Materials 23 6 768 774 N scie scopus 001146063800001 Chemistry, Physical Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Article