강문상 Lim Tae Hoon 2024-02-21T05:06:34Z 2024-02-21T05:06:34Z 1996-01 https://pubs.kist.re.kr/handle/201004/148832 Characteristics of hydrogenated amorphous and recrystallized Si films with the variation of the substrate temperature in ECR plasma CVD. Characteristics of hydrogenated amorphous and recrystallized Si films with the variation of the substrate temperature in ECR plasma CVD. Book 1696 ? 37th annual meeting of the division of plasma physics, American physicsl society, Kentucky, USA