Cho, Jung Woo Song, Myeong Seop Choi, In Hyeok Go, Kyoung-June Han, Jaewoo Lee, Tae Yoon An, Chihwan Choi, Hyung-Jin Sohn, Changhee Park, Min Hyuk Baek, Seung-Hyub Lee, Jong Seok Choi, Si-Young Chae, Seung Chul 2024-02-22T02:00:05Z 2024-02-22T02:00:05Z 2024-02-22 2024-06 1616-301X https://pubs.kist.re.kr/handle/201004/149287 The groundbreaking discovery of unconventional ferroelectricity in HfO2 opens exciting prospects for next-generation memory devices. However, the practical implementation, particularly its epitaxial stabilization and a clearer understanding of its intrinsic ferroelectricity has been a significant challenge. The study arouses the potential importance of atomic layer deposition (ALD) for mass production in modern industries, demonstrating its proficiency in achieving epitaxial growth of ferroelectric Hf0.5Zr0.5O2 (HZO) thin films on Yttria-stabilized zirconia (YSZ) substrates. Moreover, with distinct ferroelectric switching currents, the work reveals the ferroelectric characteristics of epitaxial HZO thin films deposited through ALD on YSZ-buffered Si substrates, which aligns well with CMOS technology. Overall, the results pave the way for a scalable synthesis system for ferroelectric HfO2-based materials, hinting at a bright future for low-temperature epitaxial nanoelectronics. English John Wiley & Sons Ltd. Atomic Layer Deposition of Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films Article 10.1002/adfm.202314396 1 Advanced Functional Materials, v.34, no.24 Advanced Functional Materials 34 24 N scie scopus 001158796900001 2-s2.0-85184188216 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article YTTRIA-STABILIZED ZIRCONIA GROWTH atomic layer deposition epitaxial growth ferroelectricity HfO2