Kim, Tae Soo Noh, Gichang Kwon, Seongdae Kim, Ji Yoon Dhakal, Krishna P. Oh, Saeyoung Chai, Hyun-Jun Park, Eunpyo Kim, In Soo Lee, Eunji Kim, Youngbum Lee, Jaehyun Jo, Min-kyung Kang, Minsoo Park, Cheolmin Kim, Jeongho Park, Jeongwon Kim, Suhyun Kim, Mingyu Kim, Yuseok Choi, Sung-Yool Song, Seungwoo Jeong, Hu Young Kim, Jeongyong Kwak, Joon Young Kang, Kibum 2024-02-29T01:30:04Z 2024-02-29T01:30:04Z 2024-02-29 2024-06 1616-301X https://pubs.kist.re.kr/handle/201004/149340 2D MoS2 has gained attention for the post-silicon material owing to its atomically thin nature and dangling bond-free surface. The bi-layer MoS2 is considered a promising material for electronic devices due to its better electrical properties than monolayer MoS2. However, the uniform growth of bi-layer MoS2 is still challenging. Herein, the uniform growth of bi-layer MoS2 is demonstrated using gas-phase alkali metal-assisted metal-organic chemical vapor deposition (GAA-MOCVD). Thanks to enhanced metal reactant diffusion length in GAA-MOCVD, the uniform growth of bi-layer MoS2 film is achieved even at fast nucleation kinetics for a shorter growth time compared to previously reported MOCVD. The bi-layer MoS2 field-effect transistors (FETs) show superior electrical properties such as sheet conductance and electron mobility than monolayer MoS2 FETs. The electron mobility of bi-layer MoS2 FETs with bismuth contacts reaches a maximum of 92.35 cm(2) V-1 s(-1). Using the partially grown epitaxial bi-layer (PGEB) MoS2, it is demonstrated that a photodetector showed a near-infrared photoresponse with a low dark current that is advantageous for both monolayer and bi-layer applications. The potential expansion of the growth technique to layer-by-layer growth can result in boosted performance across a wide spectrum of electronic and optoelectronic devices employing MoS2. English John Wiley & Sons Ltd. Diffusion Control on the Van der Waals Surface of Monolayers for Uniform Bi-Layer MoS2 Growth Article 10.1002/adfm.202312365 1 Advanced Functional Materials, v.34, no.23 Advanced Functional Materials 34 23 N scie scopus 001162709300001 2-s2.0-85185135107 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article TRANSITION-METAL DICHALCOGENIDES 2-DIMENSIONAL MATERIALS HIGH-MOBILITY LAYER MOS2 TRANSISTORS NUCLEATION PHOTOTRANSISTORS PHOTODETECTOR 2D materials bi-layer growth gas-phase alkali metal metal-organic chemical vapor deposition transition metal dichalcogenides