Han, Kyu Hyun Kim, Seung-Hwan Kim, Seung-Geun Kim, Jong-Hyun Song, Sungjoo Yu, Hyun-Yong 2024-03-13T06:00:07Z 2024-03-13T06:00:07Z 2024-03-13 2024-02 https://pubs.kist.re.kr/handle/201004/149454 With development of information age, multi-valued logic (MVL) technology utilizing negative differential transconductance (NDT) phenomenon has drawn attention as next-generation computing technology that can replace binary logic. However, because conventional NDT devices primarily use ternary logic, multiple-peak NDT device is required for higher-radix MVL that can process more datasets. Here, van der Waals double-peak anti-ambipolar transistor (AAT) as NDT device was developed by utilizing peak voltage (Vpeak) modulation of NDT peak. For realization of quaternary logic, Vpeak modulation technology was developed through charge transfer mechanism from channel, thereby shifting NDT peak and increasing peak-to-valley current ratio (PVCR). Furthermore, Double-peak AAT was implemented through parallel configuration of two AATs with different Vpeak values. Finally, quaternary inverter with four widely stable logic states was implemented by utilizing the developed double-peak AAT with two distinct NDT peaks and high PVCR. This double-peak AAT is expected to contribute to the development of next-generation MVL technology capable of processing datasets. English NATURE PUBLISHING GROUP Charge transfer mechanism for realization of double negative differential transconductance Article 10.1038/s41699-024-00454-z 1 npj 2D Materials and Applications, v.8, no.1 npj 2D Materials and Applications 8 1 Y scie scopus 001175811300001 2-s2.0-85186479578 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article DEVICE HETEROJUNCTION TRANSITION LOGIC TRANSISTOR DIODES