Shin, Jonghoon Seo, Haengha Ye, Kun Hee Jang, Yoon Ho Kwon, Dae Seon Lim, Junil Kim, Tae Kyun Paik, Heewon Song, Haewon Kim, Ha Ni Byun, Seungyong Shin, Seong Jae Kim, Kyung Do Lee, Yong Bin Lee, In Soo Choi, Jung-Hae Hwang, Cheol Seong 2024-04-04T04:31:48Z 2024-04-04T04:31:48Z 2024-04-04 2024-04 2050-7526 https://pubs.kist.re.kr/handle/201004/149581 This study investigates the insertion traits of the Al2O3 and Y2O3 insertion layers (ILs) and their effects on the phase evolution and electrical characteristics of polycrystalline Hf0.5Zr0.5O2 (HZO) thin films grown by atomic layer deposition (ALD). The Al2O3 and Y2O3 ILs are located at the middle position along the HZO film. The thick Al2O3 IL, above 2-3 ALD cycles, forms a continuous layer, physically separating the upper and lower regions of the film. Conversely, the thin Al2O3 IL, below 2-3 ALD cycles, and all the Y2O3 IL diffuse into the nearby HZO layers, making a single Al- or Y-doped HZO layer. The most crucial finding is that the diffused trivalent Al and Y ions substitute the tetravalent Hf and Zr ions, creating oxygen vacancies for charge neutrality and changing the phase evolutions. The substituted Al and Y suppress the monoclinic phase and enhance the tetragonal phase. Ultimately, the study suggests a new perspective on doped HfO2-based thin films, highlighting the crucial role of substitutional diffusion of dopants and charge neutrality in determining the formation of the tetragonal phase. English Royal Society of Chemistry Understanding phase evolution of ferroelectric Hf0.5Zr0.5O2 thin films with Al2O3 and Y2O3 inserted layers Article 10.1039/d4tc00061g 1 Journal of Materials Chemistry C, v.12, no.14, pp.5035 - 5046 Journal of Materials Chemistry C 12 14 5035 5046 Y scie scopus 001185493100001 2-s2.0-85187984707 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article