Park, Jeongwon Kwak, Seung Jae Kang, Sumin Oh, Saeyoung Shin, Bongki Noh, Gichang Kim, Tae Soo Kim, Changhwan Park, Hyeonbin Oh, Seung Hoon Kang, Woojin Hur, Namwook Chai, Hyun-Jun Kang, Minsoo Kwon, Seongdae Lee, Jaehyun Lee, Yongjoon Moon, Eoram Shi, Chuqiao Lou, Jun Lee, Won Bo Kwak, Joon Young Yang, Heejun Chung, Taek-Mo Eom, Taeyong Suh, Joonki Han, Yimo Jeong, Hu Young Kim, Yongjoo Kang, Kibum 2024-04-11T02:00:29Z 2024-04-11T02:00:29Z 2024-04-11 2024-03 https://pubs.kist.re.kr/handle/201004/149618 The advanced patterning process is the basis of integration technology to realize the development of next-generation high-speed, low-power consumption devices. Recently, area-selective atomic layer deposition (AS-ALD), which allows the direct deposition of target materials on the desired area using a deposition barrier, has emerged as an alternative patterning process. However, the AS-ALD process remains challenging to use for the improvement of patterning resolution and selectivity. In this study, we report a superlattice-based AS-ALD (SAS-ALD) process using a two-dimensional (2D) MoS2-MoSe2 lateral superlattice as a pre-defining template. We achieved a minimum half pitch size of a sub-10 nm scale for the resulting AS-ALD on the 2D superlattice template by controlling the duration time of chemical vapor deposition (CVD) precursors. SAS-ALD introduces a mechanism that enables selectivity through the adsorption and diffusion processes of ALD precursors, distinctly different from conventional AS-ALD method. This technique facilitates selective deposition even on small pattern sizes and is compatible with the use of highly reactive precursors like trimethyl aluminum. Moreover, it allows for the selective deposition of a variety of materials, including Al2O3, HfO2, Ru, Te, and Sb2Se3. English Nature Publishing Group Area-selective atomic layer deposition on 2D monolayer lateral superlattices Article 10.1038/s41467-024-46293-w 1 Nature Communications, v.15, no.1 Nature Communications 15 1 Y scie scopus 001181488200005 2-s2.0-85187126591 Multidisciplinary Sciences Science & Technology - Other Topics Article TOTAL-ENERGY CALCULATIONS ELASTIC BAND METHOD GROWTH MOS2 POINTS AL2O3