Kuk, Song-Hyeon Choi, Seongjun Kim, Hyeong Yun Ko, Kyul Jeong, Jaeyong Geum, Dae-Myeong Han, Jae-Hoon Park, Ji-Hyeon Jeon, Dae-Woo Kim, Sang-Hyeon 2024-04-18T02:30:04Z 2024-04-18T02:30:04Z 2024-04-18 2024-05 0018-9383 https://pubs.kist.re.kr/handle/201004/149647 High critical field (Ec) and low specific ON-resistance (RON) beta-Ga(2)O(3 )devices such as accumulationchannel metal-oxide-semiconductor field-effect-transistors(MOSFET) have been reported for high-power and extremeenvironment applications. Channel carrier mobility is acritical factor to reduceRON, but a lack of studies on channel mobility in beta-Ga2O3 MOSFETs hinders understandingthe electrical characteristics. We study carrier mobility inthe channels with various doping concentrations using MOS-gated Hall measurements. Our MOSFET achieves arecord-high peak channel mobility (mu peak) of 143 cm2/V<middle dot>s,to the best of our knowledge. Moreover, we suggest that further improvements can be made by enhancing Coulombscattering-limited mobility (mu C) English Institute of Electrical and Electronics Engineers Heavily Doped Channel Carrier Mobility in β-Ga2O3 Lateral Accumulation MOSFET Article 10.1109/TED.2024.3381916 1 IEEE Transactions on Electron Devices, v.71, no.5, pp.3429 - 3432 IEEE Transactions on Electron Devices 71 5 3429 3432 N scie scopus 001197907500001 2-s2.0-85189649294 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article ELECTRON-SCATTERING MECHANISMS INVERSION LAYER MOBILITY SI MOSFETS UNIVERSALITY Scattering MOSFET Logic gates Voltage measurement Magnetic field measurement Temperature measurement Doping Channel mobility hall measurement power metal-oxide-semiconductor field-effect-transistors (MOSFET) specific ON-resistance