Huynh, Tuyen Ngo, Tien Dat Choi, Hyungyu Choi, Minsup Lee, Wonki Nguyen, Tuan Dung Tran, Trang Thu Lee, Kwangro Hwang, Jun Yeon Kim, Jeongyong Yoo, Won Jong 2024-04-24T08:02:04Z 2024-04-24T08:02:04Z 2024-02-13 2024-01 1944-8244 https://pubs.kist.re.kr/handle/201004/149722 Doping is one of the most difficult technological challenges for realizing reliable two-dimensional (2D) material-based semiconductor devices, arising from their ultrathinness. Here, we systematically investigate the impact of different types of nonstoichiometric solid MOx (M are W or Mo) dopants obtained by oxidizing transition metal dichalcogenides (TMDs: WSe2 or MoS2) formed on graphene FETs, which results in p-type doping along with disorders. From the results obtained in this study, we were able to suggest an analytical technique to optimize the optimal UV-ozone (UVO) treatment to achieve high p-type doping concentration in graphene FETs (similar to 2.5 x 10(13) cm(-2) in this study) without generating defects, mainly by analyzing the time dependency of D and D ' peaks measured by Raman spectroscopy. Furthermore, an analysis of the structure of graphene sheets using TEM indicates that WOx plays a better protective role in graphene, compared to MoOx, suggesting that WOx is more effective for preventing the degradation of graphene during UVO treatment. To enhance the practical application aspect of our work, we have fabricated a graphene photodetector by selectively doping the graphene through oxidized TMDs, creating a p-n junction, which resulted in improved photoresponsivity compared to the intrinsic graphene device. Our results offer a practical guideline for the utilization of surface charge transfer doping of graphene toward CMOS applications. English American Chemical Society Analysis of p-Type Doping in Graphene Induced by Monolayer-Oxidized TMDs Article 10.1021/acsami.3c16229 1 ACS Applied Materials & Interfaces, v.16, no.3, pp.3694 - 3702 ACS Applied Materials & Interfaces 16 3 3694 3702 N scie scopus 001150602500001 2-s2.0-85182577224 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article CRYSTALLITE SIZE RAMAN TRANSPORT OXIDATION DEFECTS DIODES STRAIN 2D semiconductors UV-ozone treatments tungstenoxide molybdenum oxide surface charge transferdoping