Sun, Xinkai Han, Jae-Hoon Xiao, Zhenyuan Chen, Simin Jin, Taewon Noh, Taehyeon Park, Seoungmin Kim, Jaekyun Jin, Jidong Kim, Younghyun 2024-04-25T06:41:53Z 2024-04-25T06:41:53Z 2024-04-25 2024-04 https://pubs.kist.re.kr/handle/201004/149734 In this work, the fabrication and characterization of high performance indium-tin-zinc-oxide (ITZO) thin-film transistors (TFTs) with hexamethyldisilazane (HMDS) passivation are presented. The incorporation of HMDS passivation significantly enhances the electrical performance and bias stress stability of ITZO TFTs compared with those without HMDS passivation. X-ray photoelectron spectroscopy measurements reveal that ITZO TFTs with HMDS passivation offer distinct advantages over those without HMDS passivation, including an increased concentration of metal oxide and a reduced concentration of oxygen vacancies and hydroxyl groups in the active channel layer. As a result, the ITZO TFTs with HMDS passivation exhibit a saturation mobility of 26.15 +/- 1.14 cm(2)<middle dot>V-1<middle dot>s(-1), a subthreshold swing of 0.26 +/- 0.04 V<middle dot>dec(-1), an on/off current ratio of 9 x 10(8), and excellent operational bias stress stability when compared to ITZO TFTs without HMDS passivation. English AMER CHEMICAL SOC High Performance Indium-Tin-Zinc-Oxide Thin-Film Transistor with Hexamethyldisilazane Passivation Article 10.1021/acsaelm.4c00100 1 ACS Applied Electronic Materials, v.6, no.4, pp.2442 - 2448 ACS Applied Electronic Materials 6 4 2442 2448 N scie scopus 001201298800001 2-s2.0-85190132468 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Engineering Materials Science Article LAYER ENHANCEMENT STABILITY TEMPERATURE indium tin zinc oxide (ITZO) thin-film transistors(TFTs) hexamethyldisilazane (HMDS) passivation bias stress stability