Park, Min Ho Jeong, Jun Hyung Kim, Wonsik Park, Soohyung Lim, Byeong Min Lee, Hong-Sub Kang, Seong Jun 2024-04-29T09:00:06Z 2024-04-29T09:00:06Z 2024-04-29 2024-05 2050-7526 https://pubs.kist.re.kr/handle/201004/149760 Memristors are becoming increasingly recognized as candidates for neuromorphic devices due to their low power consumption, non-volatile memory, and synaptic properties and the ease of parallel computing through crossbar arrays. However, sneak current is a critical obstacle in crossbar arrays, and much research is being conducted to suppress the sneak current through self-rectifying characteristics. Here, we present a highly straightforward method for fabricating an active layer of a self-rectifying memristor through a single spin coating process, capitalizing on the attributes of spin coating, which initiates the reaction from the upper portion of the solution. We fabricated a self-rectifying memristor using an Ag/TiO2/TiOx/ITO structure through a vacuum-free solution process with low cost. During the spin-coating process, the reaction between titanium isopropoxide (TTIP) and ambient moisture formed TiO2 with an oxygen vacancy gradient. We confirmed the natural oxygen vacancy gradient using X-ray photoelectron spectroscopy (XPS) depth profiling and elucidated the resistance switching and self-rectifying mechanisms of the memristor based on the energy band structure. The memristors exhibited resistance switching and self-rectifying characteristics, which were essential characteristics for preventing sneak currents in a 3 × 3 crossbar array structure. English Royal Society of Chemistry A facile solution processible self-rectifying and sub-1 V operating memristor via oxygen vacancy gradient within a TiO2 single layer Article 10.1039/d4tc00227j 1 Journal of Materials Chemistry C, v.12, no.19, pp.6881 - 6892 Journal of Materials Chemistry C 12 19 6881 6892 N scie scopus 001208280800001 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article ANATASE MEMORY DENSITY OXIDE NANOPARTICLES DEPOSITION COATINGS FILMS ARRAY LOW-POWER