Kim, Dong Chan Seung, Hyojin Yoo, Jisu Kim, Junhee Song, Hyeon Hwa Kim, Ji Su Kim, Yunho Lee, Kyunghoon Choi, Changsoon Jung, Dongjun Park, Chansul Heo, Hyeonjun Yang, Jiwoong Hyeon, Taeghwan Choi, Moon Kee Kim, Dae-Hyeong 2024-05-02T02:30:07Z 2024-05-02T02:30:07Z 2024-05-02 2024-05 https://pubs.kist.re.kr/handle/201004/149774 Stretchable displays that can change their shape and size under strain could be used to create displays with unconventional form factors. However, intrinsically stretchable light-emitting devices have poor luminous performance, such as low brightness. Here we show that intrinsically stretchable quantum dot light-emitting diodes (QLEDs) can be made using a mechanically soft and stretchable emissive layer consisting of a ternary nanocomposite of colloidal quantum dots, an elastomeric polymer and a charge transport polymer. The light-emitting layer maintains a nearly constant interparticle distance even under 50% strain, ensuring reliable operation of the QLED under stretching. The polymer-rich charge transport region at the bottom of the nanocomposite functions as a hole transport pathway to the embedded quantum dots. The QLEDs exhibit a turn-on voltage of 3.2 V and a maximum luminance of 15,170 cd m-2 at 6.2 V without loss of brightness, even when under 50% strain, and can be used to make stretchable full-colour passive-matrix QLED arrays. Using an intrinsically stretchable nanocomposite of quantum dots, an elastomer and a hole transport polymer as an emissive layer, stretchable light-emitting diodes can be fabricated that exhibit high brightness even under 50% strain. English NATURE PUBLISHING GROUP Intrinsically stretchable quantum dot light-emitting diodes Article 10.1038/s41928-024-01152-w 1 Nature Electronics, v.7, no.5, pp.365 - 374 Nature Electronics 7 5 365 374 N scie scopus 001202862700001 2-s2.0-85190372145 Engineering, Electrical & Electronic Engineering Article DEVICES