Kim, Yeon Ho Jiang, Wei Lee, Donghun Moon, Donghoon Choi, Hyun-Young Shin, June-Chul Jeong, Yeonsu Kim, Jong Chan Lee, Jaeho Huh, Woong Han, Chang Yong So, Jae-Pil Kim, Tae Soo Kim, Seong Been Koo, Hyun Cheol Wang, Gunuk Kang, Kibum Park, Hong-Gyu Jeong, Hu Young Im, Seongil Lee, Gwan-Hyoung Low, Tony Lee, Chul-Ho 2024-05-16T09:30:27Z 2024-05-16T09:30:27Z 2024-05-16 2024-07 0935-9648 https://pubs.kist.re.kr/handle/201004/149854 A gate stack that facilitates a high-quality interface and tight electrostatic control is crucial for realizing high-performance and low-power field-effect transistors (FETs). However, when constructing conventional metal-oxide-semiconductor structures with two-dimensional (2D) transition metal dichalcogenide channels, achieving these requirements becomes challenging due to inherent difficulties in obtaining high-quality gate dielectrics through native oxidation or film deposition. Here, a gate-dielectric-less device architecture of van der Waals Schottky gated metal-semiconductor FETs (vdW-SG MESFETs) using a molybdenum disulfide (MoS2) channel and surface-oxidized metal gates such as nickel and copper is reported. Benefiting from the strong SG coupling, these MESFETs operate at remarkably low gate voltages, <0.5 V. Notably, they also exhibit Boltzmann-limited switching behavior featured by a subthreshold swing of approximate to 60 mV dec(-1) and negligible hysteresis. These ideal FET characteristics are attributed to the formation of a Fermi-level (E-F) pinning-free gate stack at the Schottky-Mott limit. Furthermore, authors experimentally and theoretically confirm that E-F depinning can be achieved by suppressing both metal-induced and disorder-induced gap states at the interface between the monolithic-oxide-gapped metal gate and the MoS2 channel. This work paves a new route for designing high-performance and energy-efficient 2D electronics. English WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Boltzmann Switching MoS2 Metal-Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky-Mott Limit Article 10.1002/adma.202314274 1 Advanced Materials, v.36, no.29 Advanced Materials 36 29 N scie scopus 001216647900001 2-s2.0-85191810760 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article 2D semiconductors Fermi-level pinning low-power electronics metal-semiconductor field-effect transistors MoS2