Yu, Byoung-Soo Kim, Wonsik Jang, Jisu Lee, Je-Jun Hong, Jung Pyo Kwon, Namhee Kim, Seunghwan Ha, Aelim Kim, Hong-Kyu Ahn, Jae-Pyoung Jeong, Kwangsik Taniguchi, Takashi Watanabe, Kenji Wang, Gunuk Ahn, Jongtae Park, Soohyung Hwang, Do Kyung 2024-05-30T10:00:16Z 2024-05-30T10:00:16Z 2024-05-30 2024-10 1616-301X https://pubs.kist.re.kr/handle/201004/149972 Precise control over polarity in field-effect transistors (FETs) plays a pivotal role in the design and construction of complementary metal-oxide-semiconductor (CMOS) logic circuits. In particular, achieving such precise polarity control in 2D semiconductors is crucial for the further development of advanced electronic applications beyond unit devices. This paper presents a systematic investigation on the reversible transition of carrier types in a 2D MoTe2 semiconductor under different annealing atmospheres. Photoemission spectroscopy and density functional theory (DFT) calculations demonstrate that annealing processes in vacuum and in ambient air induce a modification in the density of states, resulting in alterations in p-type or n-type characteristics. These reversible changes are attributed to the physisorption and elimination of oxygen on the surface of MoTe2. Furthermore, it is found that the device geometry affects the polarity of the transistor. By strategically manipulating both the annealing conditions and the geometric configuration, the n- and p-type unipolar characteristics of MoTe2 FETs are successfully modulated and ultimately demonstrating that the functionality of not only a complementary inverter with a high voltage gain of approximate to 20, but also more complex logic circuits of NAND and NOR gates. English John Wiley & Sons Ltd. Reversible Polarity Control in 2D MoTe2 Field-Effect Transistors for Complementary Logic Gate Applications Article 10.1002/adfm.202404129 1 Advanced Functional Materials, v.34, no.41 Advanced Functional Materials 34 41 N scie scopus 001222930400001 2-s2.0-85192876252 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article; Early Access P-TYPE METAL OPTOELECTRONICS RESISTANCE DEFECTS WSE2 field-effect transistor logic application MoTe2 reversible polarity control