Kang, Sooseok Roh, Il-Pyo Kim, Sang Hyeon Kang, Moon Hee Geum, Dae-Myeong Song, Jin Dong 2024-06-07T02:00:13Z 2024-06-07T02:00:13Z 2024-06-07 2024-06 0925-8388 https://pubs.kist.re.kr/handle/201004/150010 Our study explores growth techniques and the electrical/optical behavior of InAs 0.7 Sb 0.3 compounds on GaAs substrates, utilizing various metamorphic buffer layers. The InAlSb graded -buffer layer emerged as the most promising, displaying a remarkable electron mobility of 26,370 cm/V center dot s, a record high. It signifies excellent lateral crystal quality for room -temperature carrier transport. Meanwhile, the presence of micro -twins, evident in cross-sectional TEM images, degrades vertical crystal quality. We further assess crystal quality through lowtemperature Hall mobility and photoresponses, featuring reduced bowing parameters. These findings offer valuable insights for optimizing metamorphic growth platforms for ternary InAsSb compounds. English Elsevier BV High electron mobility in metamorphic epitaxial InAs0.7Sb0.3 compound and its p-i-n photodetector Article 10.1016/j.jallcom.2024.174255 1 Journal of Alloys and Compounds, v.989 Journal of Alloys and Compounds 989 Y scie scopus 001224617400001 2-s2.0-85189311435 Chemistry, Physical Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Chemistry Materials Science Metallurgy & Metallurgical Engineering Article MOLECULAR-BEAM EPITAXY PHOTOVOLTAIC DETECTORS TWIN DEFECTS INSB GAAS PHOTOLUMINESCENCE INAS1-XSBX FILMS InAlSb Metamorphic epitaxy Molecular beam epitaxy InSb