Lee, Kwang Jae Kim, Yeong Jae Min, Jung-Hong Kang, Chun Hong Subedi, Ram Chandra Zhang, Huafan Al-Maghrabi, Latifah Park, Kwangwook Ahn, Dante Pak, Yusin Ng, Tien Khee Song, Young Min Ooi, Boon S. Bakr, Osman M. Min, Jungwook 2024-06-13T01:30:33Z 2024-06-13T01:30:33Z 2024-06-13 2024-10 https://pubs.kist.re.kr/handle/201004/150054 When implementing optoelectronic devices through the stacking of heterogeneous materials, considering the bandgap offset is crucial for achieving efficient carrier dynamics. In this study, the bandgap offset characteristics are investigated when n-type gallium nitride nanowires (n-GaN NWs) are used as electron transport layers in methylammonium lead iodide (MAPbI(3))-based optoelectronic devices. n-GaN NWs are grown on indium-tin-oxide (ITO)-coated glass via the plasma-assisted molecular beam epitaxy (PA-MBE) process to form the "GaN NWs-on-glass" platform. A MAPbI(3) thin film is then spin-coated on the GaN NWs-on-glass. X-ray photoelectron spectroscopy (XPS) shows that the valence and conduction band offsets in the MAPbI(3)/n-GaN heterostructure are 2.19 and 0.40 eV, respectively, indicating a type-II band alignment ideal for optoelectronic applications. Prototype photovoltaic devices stacking perovskite on GaN NWs-on-glass show excellent interfacial charge-transfer ability, photon recycling, and carrier extraction efficiency. As a pioneering step in exploiting the diverse potential of the GaN-on-glass, it is demonstrated that the junction characteristics of MAPbI(3)/n-GaN NW heterostructures can lead to a variety of optoelectronic device applications. English Wiley-VCH Verlag Characteristics of MAPbI3 Stacked on the GaN Nanowires-On-Glass Article 10.1002/aelm.202400095 1 Advanced Electronic Materials, v.10, no.10 Advanced Electronic Materials 10 10 Y scie scopus 001235236600001 2-s2.0-85194531591 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article LIGHT-EMITTING-DIODES TEMPERATURE CRYSTALLIZATION EPITAXIAL-GROWTH THIN-FILMS PEROVSKITE LAYER PHOTODETECTOR DEGRADATION NUCLEATION EFFICIENCY electron transport layer GaN nanowires GaN-on-glass MAPbI(3) photodetector solar cell