Jeong, Joo Hee Yoon, Seong Hun Lee, Seung Hee Kuh, Bong Jin Kim, Taikyu Jeong, Jae Kyeong 2024-06-13T06:00:19Z 2024-06-13T06:00:19Z 2024-06-13 2024-05 0741-3106 https://pubs.kist.re.kr/handle/201004/150080 This study shows the effects of an ultrathin Al2O3-doped ZnO (AZO) interlayer inserted between the channel layer and source/drain (S/D) electrodes on the electrical contact properties of amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs). In particular, Al2O3-doping ratio-dependent variations in electrical contacts were systemically investigated, which were modulated by adjusting the number of Al2O3 injection cycles during atomic-layer-deposition (ALD) of AZO. Consequently, a-IGZO TFTs using a 1.8-nm-thick AZO interlayer (IL) with an Al2O3:ZnO sub-cycle ratio of 2:8 showed the lowest specific contact resistivity of (4.2 +/- 7.3) x 10(-7) Omega center dot cm(2). This value is three orders of magnitude lower than that of devices without the AZO IL. This substantial improvement could be attributed to the IL's high electron concentration of 1.9 x 10(18) /cm(3), which greatly lowered the effective Schottky barrier height between IGZO and the S/D electrodes. This enhanced electrical contact led to a field-effect mobility increase from 38.8 +/- 0.8 to 45. 3 +/- 0.6 cm(2)/Vs. English Institute of Electrical and Electronics Engineers Improved Specific Contact Resistivity in Amorphous IGZO Transistors Using an ALD-Derived Al-Doped ZnO Interlayer Article 10.1109/LED.2024.3381159 1 IEEE Electron Device Letters, v.45, no.5, pp.849 - 852 IEEE Electron Device Letters 45 5 849 852 N scie scopus 001211581100027 2-s2.0-85189512082 Engineering, Electrical & Electronic Engineering Article ATOMIC-LAYER PERFORMANCE CHANNEL VOLTAGE Zinc oxide II-VI semiconductor materials Thin film transistors Iron Electrodes Electrons Conductivity a-IGZO thin-film transistor metal-interlayer-semiconductor contact specific contact resistivity