Park, Minji Lim, Chanwoo Lee, Hyejin Kang, Byungsoo Hwang, Hyun Wook Kim, Seok Ki Lee, Phillip Kim, Woong Yu, Hyeonggeun Kim, Taehee 2024-06-28T08:00:33Z 2024-06-28T08:00:33Z 2024-06-28 2024-06 1944-8244 https://pubs.kist.re.kr/handle/201004/150151 Colloidal PbS quantum dot solar cells (QDSCs) have been primarily demonstrated in n-i-p structures by incorporating a solution-processed ZnO electron transporting layer (ETL). Nevertheless, the inherent energy barrier for the electron extraction at the ZnO/PbS junction along with the defective nature significantly diminishes the performance of the PbS QDSCs. In this study, by employing Sn-doped ZnO (ZTO) ETL, we have tuned the conduction band offset at the junction from spike-type to cliff-type so that the electron extraction barrier can be eliminated and the overall photovoltaic parameters can be enhanced (open-circuit voltage of 0.7 V, fill factor over 70%, and efficiency of 11.3%) as compared with the counterpart with the undoped ZnO ETL. The X-ray photoelectron spectroscopy (XPS) analysis revealed a mitigation of oxygen vacancies in the ZTO ETL of our PbS QDSCs. Our work signifies the importance of Sn doping into the conventional ZnO ETL for the superior electron extraction in PbS QDSCs. English American Chemical Society Sn-Doped Zinc Oxide as an Electron Transporting Layer for Enhanced Performance in PbS Quantum Dot Solar Cells Article 10.1021/acsami.4c04128 1 ACS Applied Materials & Interfaces, v.16, no.25, pp.32375 - 32384 ACS Applied Materials & Interfaces 16 25 32375 32384 N scie scopus 001247378500001 2-s2.0-85196417001 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article ORIGIN DEFECT PASSIVATION INTERLAYERS solar cells PbS quantum dots ZnO Sn-doped ZnO electrontransporting layer oxygenvacancy